Grzegorz Maciejewski, Ph.D.

Institute of Fundamental Technological Research 

Swietokrzyska 21, 00 049 Warsaw, Poland

 

room 613

tel. (48 22) 8261281 ext. 219,

fax (48 22) 8269815

email:

 

 

Refereed publications:

 

18. A. Czyzak, J. Z. Domagala, G. Maciejewski, and Z.R. Zytkiewicz

X-ray diffraction micro-imaging of strain in laterally overgrown GaAs layers.

Part I: analysis of a single GaAs stripe,

Applied Physics A, vol. 91 (4), 601-607, 2008.

 

17. S. Kret, P. Dłużewski, A. Szczepańska, M. Żak, R. Czernecki, M. Krysko, M. Leszczyński, and G. Maciejewski,

Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal

revealed by transmission electron microscopy and X-ray diffraction,

Nanotechnology, vol. 18 (46), 465707, 2007.

 

16. G. Maciejewski,

Plastic strain field caused by dislocations,

Physica B: Condensed Matter, vol. 401-402, 699-701, 2007.

 

15. S. Stupkiewicz, G. Maciejewski, and H. Petryk,

Low-energy morphology of the interface layer between austenite and twinned martensite,

Acta Materialia, vol. 55 (18), 6292-6306, 2007.

 

14. G. Maciejewski, M. Sarzyński, J. Z. Domagala, and M. Leszczyński,

A new method of strain determination in partially relaxed thin films,

Physica Status Solidi C, vol. 4 (8), 3048-3055, 2007.

 

 13. G. Maciejewski, S. Kret, and P. Ruterana,

Piezoelectric field around threading dislocation in GaN determined on the basis of high-resolution transmission electron microscopy image,

Journal of Microscopy, vol. 223 (3), 212-215, 2006.

 

12. H. Petryk, S. Stupkiewicz and G. Maciejewski,

Modeling of austenite/martensite laminates with interfacial energy effect,

Proc. IUTAM Symp. on Size Effects on Material and Structural Behaviour at Micron- and Nano-scales, 151-162. Springer, 2006.

 

11. G. Maciejewski, S. Stupkiewicz and H. Petryk,

Elastic micro-strains at the austenite-twinned martensite interface,

Archives of Mechanics, vol. 57 (4), 277-297, 2005.

 

10. P. Ruterana, P. Singh, S. Kret, G. Jurczak, G. Maciejewski, P. Dluzewski, H. K. Cho, R. J. Choi, H. J. Lee and E. K. Suh,

Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures,

Physica Status Solidi B, vol. 241 (12), 2735-2738, 2004.

 

9. G. Maciejewski, G. Jurczak, S. Kret, P. Dłużewski and P. Ruterana,

Evidence of strong indium segregation in MOCVD In_xGa_1-xN/GaN quantum layers,

GaN and Related Alloys, vol. 798, 811-816, 2004.

 

8. G. Jurczak, G. Maciejewski, S. Kret, P. Dłużewski and P. Ruterana,

Modeling of indium rich clusters in MOCVD In_xGa_1-xN/GaN multilayers,

Journal of Alloys and Compounds, vol. 382 (1-2), 10-16, 2004.

 

7. G. Maciejewski, P. Dłużewski,

Nonlinear finite element calculations of residual stresses in dislocated crystals,

Computational Materials Science, vol. 30 (1-2), 44-49, 2004.

 

6. P. Dłużewski, G. Maciejewski, G. Jurczak, S. Kret and J. Y. Laval,

Nonlinear FE analysis of residual  stresses induced by dislocations in heterostructures,

Computational Materials Science, vol. 29 (3), 379-395, 2004.

 

5. S. Kret, G. Maciejewski, P. Dłużewski, P. Ruterana, N. Grandjean and B. Damilano,

Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers,

Materials Chemistry and Physics, vol. 81 (2-3), 273-276, 2003.

 

4. P. Ruterana, S. Kret, A. Vivet, G. Maciejewski and P. Dluzewski,

Quantitative analysis of composition fluctuation in InGaN quantum wells, a comparative study of molecular beam and metalorganic vapour phase epitaxial layers,

Journal of Applied Physics, vol. 91 (11), 8979-8985, 2002.

 

3. P. Dłużewski, G. Jurczak, G. Maciejewski, S. Kret, P. Ruterana and G. Nouet,

Finite element simulation of residual stresses in epitaxial layers,

Materials Science Forum, vol. 404-405, 141-146, 2002.

 

2. S. Kret, P. Dluzewski, G. Maciejewski , V. Potin, J. Chen, P. Ruterana and G. Nouet,

The dislocations of low-angle grain boundaries in GaN epilayers: a HRTEM quantitative study and finite element stress state calculation,

Diamond and Related Materials, vol. 11 ( 3-6), 910-913, 2002.

 

1. P. Dłużewski, G. Maciejewski,

Thermodynamics of orientation discontinuity surface: Small misorientation approach,

Archive of Mechanics, vol. 53 (2), 105-122, 2001.

 

 

 

 

PhD thesis:

 

The FE method applied to the determination of residual stress distribution in heterostructures (PDF   in polish).